All MOSFET. IRFU430AP Datasheet

 

IRFU430AP Datasheet and Replacement


   Type Designator: IRFU430AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO251
 

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IRFU430AP Datasheet (PDF)

 ..1. Size:879K  cn vbsemi
irfu430ap.pdf pdf_icon

IRFU430AP

IRFU430APwww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Complia

 0.1. Size:251K  international rectifier
irfr430apbf irfu430apbf.pdf pdf_icon

IRFU430AP

PD -95076ASMPS MOSFETIRFR430APbFIRFU430APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 1.7 5.0Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

 0.2. Size:252K  vishay
irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf pdf_icon

IRFU430AP

IRFR430A, IRFU430A, SiHFR430A, SiHFU430Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 1.7 Improved Gate, Avalanche and DynamicQg (Max.) (nC) 24dV/dt RuggednessQgs (nC) 6.5 Fully Characterized Capacitance andQgd (nC) 13Avalanche Voltage and Current

 6.1. Size:154K  vishay
irfr430a irfu430a sihfr430a sihfu430a.pdf pdf_icon

IRFU430AP

IRFR430A, IRFU430A, SiHFR430A, SiHFU430AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24COMPLIANTRuggednessQgs (nC) 6.5Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

Datasheet: IRFR9024NTRPBF , IRFR9024TR , IRFR9120NTRPBF , IRFU110P , IRFU120NP , IRFU3410P , IRFU3505P , IRFU3910P , IRF2807 , IRFU4615P , IRFZ34NP , IRFZ34NSTR , IRFZ44RP , IRFZ44VP , IRFZ48NP , IRFZ48RSP , IRL520NP .

History: WMN10N65C4 | JFFM13N50C | IRF7103I | JFFM10N80C | ME10N15 | MDU2657 | SP8007

Keywords - IRFU430AP MOSFET datasheet

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