All MOSFET. IRFU4615P Datasheet

 

IRFU4615P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFU4615P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056(typ) Ohm
   Package: TO251

 IRFU4615P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFU4615P Datasheet (PDF)

 ..1. Size:1979K  cn vbsemi
 irfu4615p.pdf

IRFU4615P IRFU4615P

IRFU4615Pwww.VBsemi.twN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 25 PWM Optimized2000.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-Tab

 0.1. Size:299K  international rectifier
 irfr4615pbf irfu4615pbf.pdf

IRFU4615P IRFU4615P

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

 0.2. Size:299K  infineon
 irfr4615pbf irfu4615pbf.pdf

IRFU4615P IRFU4615P

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

 6.1. Size:289K  infineon
 auirfr4615 auirfu4615.pdf

IRFU4615P IRFU4615P

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

 6.2. Size:260K  inchange semiconductor
 irfu4615.pdf

IRFU4615P IRFU4615P

isc N-Channel MOSFET Transistor IRFU4615FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PHX6ND50E

 

 
Back to Top