IRLR3410TR MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR3410TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.114(typ) Ohm
Package: TO252
IRLR3410TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR3410TR Datasheet (PDF)
irlr3410tr.pdf
IRLR3410TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING
auirlr3410trl.pdf
PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica
irlr3410.pdf
PD - 91607BIRLR/U3410HEXFET Power MOSFET Logic Level Gate DriveD Ultra Low On-ResistanceVDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410)RDS(on) = 0.105 Advanced Process TechnologyG Fast SwitchingID = 17A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve the
irlu3410pbf irlr3410pbf.pdf
PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
auirlr3410.pdf
AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D
irlr3410pbf irlu3410pbf.pdf
PD - 95087AIRLR/U3410PbFl Logic Level Gate DriveHEXFET Power MOSFETl Ultra Low On-Resistancel Surface Mount (IRLR3410)Dl Straight Lead (IRLU3410) VDSS = 100Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.105Gl Fully Avalanche Ratedl Lead-FreeID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing tec
irlr3410.pdf
isc N-Channel MOSFET Transistor IRLR3410, IIRLR3410FEATURESStatic drain-source on-resistance:RDS(on)105mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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