ST2341SRG Datasheet and Replacement. Cross Reference Search

ST2341SRG Datasheet (PDF)

..1. Size:598K stansontech
st2341srg.pdf pdf_icon

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

7.1. Size:602K stansontech
st2341s23rg.pdf pdf_icon

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

7.2. Size:906K cn vbsemi
st2341s23r.pdf pdf_icon

ST2341S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

8.1. Size:576K stansontech
st2341a.pdf pdf_icon

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

Datasheet: SI2308A , SI2309A , SI2312A , SI2318A , SI2328A , SVT078R0ND , ST18N10D , ST2317S23RG , TK10A60D , ST3424 , ST3426 , STC4301D , STC6301D , STN2610D , STN4260 , STP4441 , STP601 .