ST2341SRG PDF and Equivalents Search

 

ST2341SRG Specs and Replacement

Type Designator: ST2341SRG

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

ST2341SRG substitution

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ST2341SRG datasheet

 ..1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2341SRG

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and... See More ⇒

 7.1. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2341SRG

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

 7.2. Size:906K  cn vbsemi
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ST2341SRG

ST2341S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-... See More ⇒

 8.1. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2341SRG

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

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Detailed specifications: SI2308A, SI2309A, SI2312A, SI2318A, SI2328A, SVT078R0ND, ST18N10D, ST2317S23RG, 13N50, ST3424, ST3426, STC4301D, STC6301D, STN2610D, STN4260, STP4441, STP601

Keywords - ST2341SRG MOSFET specs

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