ST3426 PDF and Equivalents Search

 ..1. Size:706K  stansontech
 st3426.pdf

ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 0.1. Size:745K  winsok
 wst3426.pdf

WST3426 N-Ch MOSFET General Description Product Summery The WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0A charge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct... See More ⇒

 9.1. Size:476K  stansontech
 st3422a.pdf

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒

 9.2. Size:702K  stansontech
 st3424.pdf

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 9.3. Size:419K  stansontech
 st3421srg.pdf

ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a... See More ⇒

 9.4. Size:1699K  winsok
 wst3420.pdf

WST3420 N-Ch MOSFET General Description Product Summery The WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4A for most of the small power switching and load switch applications. Applications The WST3420 meet the RoHS and Green Product requirement with full functio... See More ⇒

 9.5. Size:888K  winsok
 wst3424.pdf

WST3424 N-Ch MOSFET General Description Product Summery The WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4A for most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct... See More ⇒

 9.6. Size:798K  winsok
 wst3423.pdf

WST3423 P-Ch MOSFET General Description Product Summery The WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9A for most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu... See More ⇒

 9.7. Size:761K  winsok
 wst3427.pdf

WST3427 P-Ch MOSFET General Description Product Summery The WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5A charge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu... See More ⇒