All MOSFET. STC4301D Datasheet

 

STC4301D Datasheet and Replacement


   Type Designator: STC4301D
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252-4L
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STC4301D Datasheet (PDF)

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STC4301D

STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

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STC4301D

STC4350QNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application CCFeatures BB High collector breakdown voltage C: VCEO = 50V EE Low collector saturation voltage : VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device

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STC4301D

STC4350FNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia

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History: SSF5N60D | HLML6401 | NTMFD5C466NL | FKV575 | IXTM12N100 | FQP10N20CTSTU | AP85T03GH-HF

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