STC4301D MOSFET. Datasheet pdf. Equivalent
Type Designator: STC4301D
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.5 nC
trⓘ - Rise Time: 8.9 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252-4L
STC4301D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STC4301D Datasheet (PDF)
stc4301d.pdf
STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati
stc4350q.pdf
STC4350QNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application CCFeatures BB High collector breakdown voltage C: VCEO = 50V EE Low collector saturation voltage : VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device
stc4350f.pdf
STC4350FNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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