STC4301D PDF and Equivalents Search

 

STC4301D Specs and Replacement

Type Designator: STC4301D

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252-4L

STC4301D substitution

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STC4301D datasheet

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 stc4301d.pdf pdf_icon

STC4301D

STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒

 9.1. Size:319K  auk
 stc4350q.pdf pdf_icon

STC4301D

STC4350Q NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application C C Features B B High collector breakdown voltage C VCEO = 50V E E Low collector saturation voltage VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device ... See More ⇒

 9.2. Size:386K  auk
 stc4350f.pdf pdf_icon

STC4301D

STC4350F NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia... See More ⇒

Detailed specifications: SI2318A, SI2328A, SVT078R0ND, ST18N10D, ST2317S23RG, ST2341SRG, ST3424, ST3426, 5N65, STC6301D, STN2610D, STN4260, STP4441, STP601, STP605D, STP6625, 2N7002EM3T5G

Keywords - STC4301D MOSFET specs

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