STP4441 PDF and Equivalents Search

 ..1. Size:637K  stansontech
 stp4441.pdf

STP4441 P Channel Enhancement Mode MOSFET -10A SCRIPTION STP4441 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane t... See More ⇒

 9.1. Size:258K  samhop
 stb440s stp440s.pdf

Green Product STB/P440S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8 @ VGS=10V TO-220 & TO-263 package. 40V 65A 11.5 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263... See More ⇒

 9.2. Size:189K  samhop
 stb4410 stp4410.pdf

STB4410 Green Product STP4410 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (m ) Typ High power and current handling capability. 100V 75A 7.0 @ VGS=10V TO-220 & TO-263 package. D G STB SERIES STP SERIES TO-263(DD-PAK) TO-... See More ⇒

 9.3. Size:381K  semtron
 stp4435.pdf

STP4435 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP4435 is the P-Channel logic enhancement -30V/-10.0A, RDS(ON) =15m (typ)@VGS =-10V mode power field effect transistor is produced using -30V/-6.0A, RDS(ON) =25m (typ)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell design ... See More ⇒

 9.4. Size:549K  stansontech
 stp4435a.pdf

STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, note... See More ⇒

 9.5. Size:821K  stansontech
 stp4407a.pdf

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

 9.6. Size:579K  stansontech
 stp4407.pdf

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒

 9.7. Size:253K  stansontech
 stp4403.pdf

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n... See More ⇒

 9.8. Size:592K  stansontech
 stp4435.pdf

STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebo... See More ⇒