All MOSFET. STP6625 Datasheet

 

STP6625 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP6625
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 6.1 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOP8

 STP6625 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP6625 Datasheet (PDF)

 ..1. Size:807K  stansontech
 stp6625.pdf

STP6625 STP6625

STP6625 P Channel Enhancement Mode MOSFET -5.0A SCRIPTION STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 8.1. Size:449K  stansontech
 stp6623.pdf

STP6625 STP6625

STP6623 P Channel Enhancement Mode MOSFET -18.0ASCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 8.2. Size:448K  stansontech
 stp6621.pdf

STP6625 STP6625

STP6621 P Channel Enhancement Mode MOSFET -18.0ASCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane

 9.1. Size:497K  stansontech
 stp6635gh.pdf

STP6625 STP6625

STP6635GH P Channel Enhancement Mode MOSFET -40.0A DESCRIPTION STP6635GH is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has b

 9.2. Size:891K  cn vbsemi
 stp6635gh.pdf

STP6625 STP6625

STP6635GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFH14N100Q2

 

 
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