All MOSFET. TPM2030-3 Datasheet

 

TPM2030-3 Datasheet and Replacement


   Type Designator: TPM2030-3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT723
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TPM2030-3 Datasheet (PDF)

 ..1. Size:7264K  cn tech public
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TPM2030-3

TPM2030-3N-Channel Mosfetwww.sot23.com.twProduct SummaryApplication RDS(on)=Typ 200m@VGS= 4.5V Load/Power switch RDS(on)=Typ 250m@VGS= 2.5V Interfacing, logic switching Lead free product is acquired Battery management for ultra protable electronics Surface mount package N-channel switch with low RDS(on) Operated at low logic le

 9.1. Size:798K  cn tech public
 tpm2008p3.pdf pdf_icon

TPM2030-3

TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ

 9.2. Size:806K  cn tech public
 tpm2009ep3.pdf pdf_icon

TPM2030-3

 9.3. Size:369K  cn tech public
 tpm2077.pdf pdf_icon

TPM2030-3

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Keywords - TPM2030-3 MOSFET datasheet

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