TPM2030-3 MOSFET Datasheet: N-Ch, 20V, 0.95A. Full specification with pinout and replacement list

TPM2030-3 Specs and Replacement

Type Designator: TPM2030-3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT723

TPM2030-3 substitution

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TPM2030-3 datasheet

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TPM2030-3 N-Channel Mosfet www.sot23.com.tw Product Summary Application RDS(on)=Typ 200m @VGS= 4.5V Load/Power switch RDS(on)=Typ 250m @VGS= 2.5V Interfacing, logic switching Lead free product is acquired Battery management for ultra protable electronics Surface mount package N-channel switch with low RDS(on) Operated at low logic le... See More ⇒

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TPM2008 P3 N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW Application Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ... See More ⇒

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