All MOSFET. TPM4105EC6 Datasheet

 

TPM4105EC6 Datasheet and Replacement


   Type Designator: TPM4105EC6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 20(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SOT363
 

 TPM4105EC6 substitution

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TPM4105EC6 Datasheet (PDF)

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TPM4105EC6

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TPM4105EC6

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Datasheet: TPM2030-3 , TPM2077 , TPM2101BC3 , TPM2102BC3 , TPM2601C3 , TPM3008EP3 , TPM3134NX3 , TPM3139K , EMB04N03H , TPM4153-3 , TPM5121NEC6 , TPM603NT3 , TPM62D0LFB , TPM6401S3 , TPM7002BKM , TPM7002DFN3 , TPM7002ER3 .

History: OSG65R080TT3ZF | SVG096R5NS | NP84N04EHE | HM9926B | BUK9509-55A | BUK952R8-30B | UF640G-TQ2-R

Keywords - TPM4105EC6 MOSFET datasheet

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