TPM4105EC6 Specs and Replacement
Type Designator: TPM4105EC6
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 20 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: SOT363
TPM4105EC6 substitution
- MOSFET ⓘ Cross-Reference Search
TPM4105EC6 datasheet
tpm4153-3.pdf
TPM4153-3 www.techpublic.com.tw www.kxw-esd.com www.techpublic.com.tw www.kxw-esd.com www.techpublic.com.tw Marking A www.techpublic.com.tw www.kxw-esd.com www.techpublic.com.tw www.techpublic.com.tw www.kxw-esd.com www.kxw-esd.com www.techpublic.com.tw www.kxw-esd.com www.kxw-esd.com www.techpublic.com.tw www.techpublic.com.tw www.kxw-esd.com www.kxw-esd.com www.kxw-esd.com ... See More ⇒
Detailed specifications: TPM2030-3, TPM2077, TPM2101BC3, TPM2102BC3, TPM2601C3, TPM3008EP3, TPM3134NX3, TPM3139K, AON7403, TPM4153-3, TPM5121NEC6, TPM603NT3, TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3
Keywords - TPM4105EC6 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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