All MOSFET. TPM4105EC6 Datasheet

 

TPM4105EC6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPM4105EC6
   Marking Code: TC*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 20(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: SOT363

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TPM4105EC6 Datasheet (PDF)

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 tpm4105ec6.pdf

TPM4105EC6 TPM4105EC6

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 tpm4153-3.pdf

TPM4105EC6 TPM4105EC6

TPM4153-3www.techpublic.com.twwww.kxw-esd.comwww.techpublic.com.twwww.kxw-esd.comwww.techpublic.com.twMarking: Awww.techpublic.com.twwww.kxw-esd.com www.techpublic.com.twwww.techpublic.com.twwww.kxw-esd.comwww.kxw-esd.comwww.techpublic.com.twwww.kxw-esd.com www.kxw-esd.comwww.techpublic.com.twwww.techpublic.com.tw www.kxw-esd.comwww.kxw-esd.comwww.kxw-esd.com

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