TPM603NT3 Specs and Replacement
Type Designator: TPM603NT3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 34 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT89
TPM603NT3 substitution
- MOSFET ⓘ Cross-Reference Search
TPM603NT3 datasheet
Detailed specifications: TPM2102BC3, TPM2601C3, TPM3008EP3, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, TPM5121NEC6, RU7088R, TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6, TPM9665D6
Keywords - TPM603NT3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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