TPM8205ATS6 Specs and Replacement
Type Designator: TPM8205ATS6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT23-6
TPM8205ATS6 substitution
- MOSFET ⓘ Cross-Reference Search
TPM8205ATS6 datasheet
tpm8205ts6.pdf
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Detailed specifications: TPM4153-3, TPM5121NEC6, TPM603NT3, TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3, AO4468, TPM8205TS6, TPM9665D6, TPNTA4151PT1G, TPNTA4153NT1G, TPNTJD4105CT1G, TPNTK3134NT1G, TPNTK3139PT1G, TPNTS4101PT1G
Keywords - TPM8205ATS6 MOSFET specs
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History: AOC2804
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