TPM9665D6 Specs and Replacement
Type Designator: TPM9665D6
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 17 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: DFN2X2-6L
TPM9665D6 substitution
- MOSFET ⓘ Cross-Reference Search
TPM9665D6 datasheet
tpm9665d6.pdf
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Detailed specifications: TPM603NT3, TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6, IRFZ44N, TPNTA4151PT1G, TPNTA4153NT1G, TPNTJD4105CT1G, TPNTK3134NT1G, TPNTK3139PT1G, TPNTS4101PT1G, UT8205AG-AG6, ZXMN6A11ZTA-P
Keywords - TPM9665D6 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRLML6402GPBF | SVT043R0NL5TR
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