TPM9665D6 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPM9665D6
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 17 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 6.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.2 nC
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: DFN2X2-6L
TPM9665D6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPM9665D6 Datasheet (PDF)
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tpm9665d6.pdf
tpm9665d6.pdf
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