All MOSFET. ZXMN6A11ZTA-P Datasheet

 

ZXMN6A11ZTA-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN6A11ZTA-P
   Marking Code: 603N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT89

 ZXMN6A11ZTA-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN6A11ZTA-P Datasheet (PDF)

 ..1. Size:4010K  cn tech public
 zxmn6a11zta-p.pdf

ZXMN6A11ZTA-P ZXMN6A11ZTA-P

 3.1. Size:201K  diodes
 zxmn6a11zta.pdf

ZXMN6A11ZTA-P ZXMN6A11ZTA-P

A Product Line of Diodes IncorporatedZXMN6A11Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 5) Fast Switching Speed 120m @ VGS = 10V 3.6A Low Gate Drive 60V 180m @ VGS = 4.5V 2.9A Lead Free/RoHS Compliant (Note 1) "Green

 5.1. Size:581K  diodes
 zxmn6a11z.pdf

ZXMN6A11ZTA-P ZXMN6A11ZTA-P

ZXMN6A11Z60V SOT89 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.120 @ VGS= 10V 3.6600.180 @ VGS= 4.5V 2.9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistanc

 5.2. Size:904K  cn vbsemi
 zxmn6a11z.pdf

ZXMN6A11ZTA-P ZXMN6A11ZTA-P

ZXMN6A11Zwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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