All MOSFET. K1307 Datasheet

 

K1307 MOSFET. Datasheet pdf. Equivalent


   Type Designator: K1307
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 72(max) nC
   trⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086(typ) Ohm
   Package: TO220FP

 K1307 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

K1307 Datasheet (PDF)

 ..1. Size:2037K  cn vbsemi
 k1307.pdf

K1307 K1307

K1307www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal Resista

 0.1. Size:96K  renesas
 rej03g0926 2sk1307ds.pdf

K1307 K1307

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:83K  renesas
 2sk1307.pdf

K1307 K1307

2SK1307 Silicon N Channel MOS FET REJ03G0926-0200 (Previous: ADE-208-1265) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS00

 0.3. Size:252K  inchange semiconductor
 2sk1307.pdf

K1307 K1307

isc N-Channel MOSFET Transistor 2SK1307FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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