K4145 MOSFET Datasheet: N-Ch, 60V, 120A. Full specification with pinout and replacement list

K4145 Specs and Replacement

The K4145 is a power MOSFET transistor designed for switching and amplification applications in power electronics. It features a low on-state resistance and fast switching capability, making it suitable for use in power supplies, inverters, motor drivers, DC-DC converters. The device is optimized for efficient operation at moderate to high currents while maintaining stable thermal performance when properly heatsinked. Key benefits of the K4145 include low conduction losses, good switching speed, high reliability under repetitive load conditions. Its MOSFET structure allows for simple gate drive requirements and high input impedance. Limitations include sensitivity to electrostatic discharge (ESD) and potential overheating if operated beyond its safe operating area. It also requires careful gate voltage control to avoid damage. When designing circuits, ensure proper gate protection, adequate cooling, and correct voltage margins. During repair, always check for shorted drain-source junctions and replace associated gate resistors or drivers if failure is detected.

Type Designator: K4145

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 570 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm

Package: TO220AB

K4145 substitution

- MOSFET ⓘ Cross-Reference Search

K4145 datasheet

..1. Size:869K cn vbsemi
k4145.pdf pdf_icon

K4145 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit ... See More ⇒

0.1. Size:228K 1
2sk4145.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 42 A) Low input capacitance Ciss = 5300 pF TYP. ORDERING INFORMATION PART NUMBER LEAD PLATING ... See More ⇒

0.2. Size:281K renesas
2sk4145-s19-ay.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

0.3. Size:148K utc
uk4145.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. FEATURES * Low on-state resistance RDS(ON) =10m (Max.) @ VGS =10V, ID =42A * Low input capacitance CISS = 5300pF (Typ.) SYMBOL 2.Drain 1.Gate 3.Source OR... See More ⇒