MEM2302 MOSFET. Datasheet pdf. Equivalent
Type Designator: MEM2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23
MEM2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEM2302 Datasheet (PDF)
mem2302.pdf
MEM2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver
mem2302x.pdf
MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra
mem2302xg-n.pdf
MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L
mem2302m3.pdf
MEM2302N-Channel MOSFET MEM2302M3General Description FeaturesMEM2302M3G Series N-channel enhancement mode 20V/3Afield-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3ADMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2Aminimize on-state resistance. This device particularly High Density Cell Design For Ultra Low
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