MTP8N06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTP8N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25(max) nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072(typ) Ohm
   Package: TO220AB

MTP8N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP8N06 Datasheet (PDF)

..1. Size:932K cn vbsemi
mtp8n06.pdf

MTP8N06www.VBsemi.twN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Fast switchingRDS(on) ()VGS = 10 V 0.072 Ease of parallelingQg max. (nC) 25Simple drive requirementsQgs (nC) 5.8Qgd (nC) 11Configuration SingleDTO-220ABGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)P

0.1. Size:212K motorola
mtp8n06erev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

0.2. Size:185K motorola
mtp8n06e.pdf

9.1. Size:158K motorola
mtp8n50erev2x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

9.2. Size:119K motorola
mtp8n50e.pdf