NCE55P05S PDF and Equivalents Search

 

NCE55P05S Specs and Replacement

Type Designator: NCE55P05S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 334 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 typ Ohm

Package: SO8

NCE55P05S substitution

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NCE55P05S datasheet

 ..1. Size:357K  ncepower
nce55p05s.pdf pdf_icon

NCE55P05S

http //www.ncepower.com NCE55P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON) ... See More ⇒

 ..2. Size:1756K  cn vbsemi
nce55p05s.pdf pdf_icon

NCE55P05S

NCE55P05S www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 100 % Rg and UIS tested RDS(on) ( ) at VGS = -10 V 0.050 RDS(on) ( ) at VGS = -4.5 V 0.060 ID (A) per leg -8 S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAME... See More ⇒

 7.1. Size:392K  ncepower
nce55p04s.pdf pdf_icon

NCE55P05S

Pb Free Product http //www.ncepower.com NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE55P04S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON) ... See More ⇒

 7.2. Size:926K  cn vbsemi
nce55p04s.pdf pdf_icon

NCE55P05S

NCE55P04S www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V... See More ⇒

Detailed specifications: NCE3035G, NCE3080KA, NCE30H10, NCE30H12K, NCE4503S, NCE4606, NCE4953, NCE55P04S, 20N50, NCE60P25K, NDS331N-NL, NDS332P-NL, NDS9948-NL, NIF5002NT1G, NIF5002NT3G, NT2955G, NTB25P06T4G

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