All MOSFET. NDS331N-NL Datasheet

 

NDS331N-NL MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDS331N-NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(typ) Ohm
   Package: SOT23

 NDS331N-NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDS331N-NL Datasheet (PDF)

 ..1. Size:877K  cn vbsemi
 nds331n-nl.pdf

NDS331N-NL NDS331N-NL

NDS331N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con

 7.1. Size:63K  fairchild semi
 nds331n.pdf

NDS331N-NL NDS331N-NL

July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is especia

 9.1. Size:62K  fairchild semi
 nds336p.pdf

NDS331N-NL NDS331N-NL

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 Vfield effect transistors are produced using Fairchild'sRDS(ON) = 0.2 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. This very highVery low level

 9.2. Size:62K  fairchild semi
 nds335n.pdf

NDS331N-NL NDS331N-NL

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N -Channel logic level enhancement mode power field1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is espec

 9.3. Size:84K  fairchild semi
 nds332p.pdf

NDS331N-NL NDS331N-NL

June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features-1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 VThese P-Channel logic level enhancement mode power fieldeffect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V.cell density, DMOS technology. This very high density process isVery

 9.4. Size:851K  cn vbsemi
 nds336p.pdf

NDS331N-NL NDS331N-NL

NDS336Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 9.5. Size:869K  cn vbsemi
 nds332p-nl.pdf

NDS331N-NL NDS331N-NL

NDS332P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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History: G20N20

 

 
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