All MOSFET. NTD5865NLT4G Datasheet

 

NTD5865NLT4G Datasheet and Replacement


   Type Designator: NTD5865NLT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
   Package: TO252
 

 NTD5865NLT4G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD5865NLT4G Datasheet (PDF)

 ..1. Size:824K  cn vbsemi
ntd5865nlt4g.pdf pdf_icon

NTD5865NLT4G

NTD5865NLT4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 5.1. Size:269K  onsemi
ntd5865nl.pdf pdf_icon

NTD5865NLT4G

NTD5865NLN--Channel Power MOSFET60 V, 40 A, 16 mFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant16 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted) 60 V 40 A19 m @4.5 VParameter Symbol Value Uni

 5.2. Size:743K  cn vbsemi
ntd5865nl-1g.pdf pdf_icon

NTD5865NLT4G

NTD5865NL-1Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy

 6.1. Size:137K  onsemi
ntd5865n-1g.pdf pdf_icon

NTD5865NLT4G

NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou

Datasheet: NTB25P06T4G , NTD12N10-1G , NTD20N06LT4G , NTD2955T4G , NTD2955VT4G , NTD4860NT4G , NTD5807NT , NTD5865NL-1G , IRF1405 , NTD6416ANT , NTE4153NT1G , NTF3055-100T , NTMD3P03R2G , NTR0202PLT1G , NTR4502PT1G , NTS2101PT1G , NTS4101PT1G .

History: STB9NK60ZD

Keywords - NTD5865NLT4G MOSFET datasheet

 NTD5865NLT4G cross reference
 NTD5865NLT4G equivalent finder
 NTD5865NLT4G lookup
 NTD5865NLT4G substitution
 NTD5865NLT4G replacement

 

 
Back to Top

 


 
.