NTD5865NLT4G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD5865NLT4G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
Package: TO252
NTD5865NLT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD5865NLT4G Datasheet (PDF)
ntd5865nlt4g.pdf
NTD5865NLT4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
ntd5865nl.pdf
NTD5865NLN--Channel Power MOSFET60 V, 40 A, 16 mFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant16 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted) 60 V 40 A19 m @4.5 VParameter Symbol Value Uni
ntd5865nl-1g.pdf
NTD5865NL-1Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy
ntd5865n-1g.pdf
NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou
ntd5865n-d.pdf
NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
