NTD5865NLT4G PDF and Equivalents Search

 

NTD5865NLT4G Specs and Replacement

Type Designator: NTD5865NLT4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: TO252

NTD5865NLT4G substitution

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NTD5865NLT4G datasheet

 ..1. Size:824K  cn vbsemi
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NTD5865NLT4G

NTD5865NLT4G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim... See More ⇒

 5.1. Size:269K  onsemi
ntd5865nl.pdf pdf_icon

NTD5865NLT4G

NTD5865NL N--Channel Power MOSFET 60 V, 40 A, 16 m Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant 16 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) 60 V 40 A 19 m @4.5 V Parameter Symbol Value Uni... See More ⇒

 5.2. Size:743K  cn vbsemi
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NTD5865NLT4G

NTD5865NL-1G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Sy... See More ⇒

 6.1. Size:137K  onsemi
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NTD5865NLT4G

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou... See More ⇒

Detailed specifications: NTB25P06T4G, NTD12N10-1G, NTD20N06LT4G, NTD2955T4G, NTD2955VT4G, NTD4860NT4G, NTD5807NT, NTD5865NL-1G, IRF830, NTD6416ANT, NTE4153NT1G, NTF3055-100T, NTMD3P03R2G, NTR0202PLT1G, NTR4502PT1G, NTS2101PT1G, NTS4101PT1G

Keywords - NTD5865NLT4G MOSFET specs

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