P0603BVG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0603BVG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008(typ)
Ohm
Package:
SO8
P0603BVG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0603BVG
Datasheet (PDF)
..1. Size:834K cn vbsemi
p0603bvg.pdf 
P0603BVGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
7.1. Size:387K unikc
p0603bv.pdf
P0603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6m @VGS = 10V 16ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C16IDContinuous Drain CurrentTA = 70 C13AIDM70Pulsed Drain Current1I
8.1. Size:450K unikc
p0603bd.pdf
P0603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 70ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C70IDContinuous Drain CurrentTC = 100 C44AIDM180Pulsed Drain Current1
8.2. Size:479K unikc
p0603bdb.pdf
P0603BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 72ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C72IDContinuous Drain Current2TC= 100 C46AIDM160Pulsed Drain Current1IASAvalanche Current 50E
8.3. Size:662K unikc
p0603bdg.pdf
P0603BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = 10V30V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C68IDContinuous Drain CurrentTC= 100 C43AIDM180Pulsed Drain Current1
8.4. Size:457K unikc
p0603bk.pdf
P0603BKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6m @VGS = 10V 30APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C(Package Limited)30TC = 25 IDC(Silicon Limited)80Continuous Drain Current2
8.5. Size:340K unikc
p0603bt.pdf
P0603BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 82ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C82IDContinuous Drain Current1TC = 100 C52AIDM200Pulsed Drain Curren
8.6. Size:456K unikc
p0603bdl.pdf
P0603BDLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 6.8m @VGS = 10V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C68IDContinuous Drain Current1TC = 100 C43AIDM160Pulsed Drain Curren
8.7. Size:477K unikc
p0603bdf.pdf
P0603BDFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 78ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C78IDContinuous Drain Current2TC= 100 C49AIDM140Pulsed Drain Current1IASAvalanche Current 35E
8.8. Size:482K unikc
p0603bead.pdf
P0603BEADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 56APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TC = 25 C56 TC = 100 C35IDContinuous Drain Current1,2 TA = 25 C14.5A
8.9. Size:479K unikc
p0603bdd.pdf
P0603BDDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 71ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C71IDContinuous Drain Current2TC= 100 C45AIDM180Pulsed Drain Current1IASAvalanche Current 41E
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