RJK0822SPN PDF and Equivalents Search

 

RJK0822SPN Specs and Replacement

Type Designator: RJK0822SPN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 typ Ohm

Package: TO220AB

RJK0822SPN substitution

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RJK0822SPN datasheet

 ..1. Size:842K  cn vbsemi
rjk0822spn.pdf pdf_icon

RJK0822SPN

RJK0822SPN www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backli... See More ⇒

 9.1. Size:180K  renesas
rej03g1885 rjk0856dpbds.pdf pdf_icon

RJK0822SPN

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0822SPN

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102 (Previous REJ03G1774-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

 9.3. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0822SPN

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202 (Previous REJ03G1772-0201) Silicon N Channel Power MOS FET Rev.2.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

Detailed specifications: P120NF10, P60NF06, P80NF55-08, PHB32N06, PHD78NQ03L, PHK12NQ03L, RFD15P05SM, RFP6P08, IRF840, RRS130N03, RSS100N03T, SDM4953A, SI1539CDL-T1, SI1553CDL-T1-GE3, SI1555DL-T1, SI1967DH-T1-GE3, SI2300BDS-T1-GE3

Keywords - RJK0822SPN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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