SI2300BDS-T1-GE3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2300BDS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(typ) Ohm
Package: SOT23
SI2300BDS-T1-GE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2300BDS-T1-GE3 Datasheet (PDF)
si2300bds-t1-ge3.pdf
SI2300BDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
si2300ds.pdf
New ProductSi2300DSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Definition0.068 at VGS = 4.5 V TrenchFET Power MOSFET3.6a30 3 nC 100 % Rg Tested0.085 at VGS = 2.5 V 3.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converter for
si2300.pdf
SI230020V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions DGSSOT-23(PACKAGE)Millimeter Millime
si2300.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorSI2300SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0AV DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0AV DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emi
si2300 ki2300.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETSI2300 (KI2300)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS=20V3ID=5.0ARDS(ON)=25m @VGS=4.5V,ID=5.0ARDS(ON)=35m @VGS=2.5V,ID=4.0A1 2+0.02+0.10.15 -0.020.95 -0.1RDS(ON)=55m @VGS=1.8V,ID=1.0A+0.11.9 -0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating
si2300-3.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETSI2300 (KI2300)SOT-23-3Unit: mm+0.22.9-0.1Features+0.10.4 -0.1VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A3VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.21. Gate2. Source3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol R
si2300.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement Mode Field Effect TransistorSI2300 (KI2300)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorA
si2300a.pdf
RUMWUMW SI2300AN-Channel 20-V(D-S) MOSFETUMW SI2300AID SOT-23 V(BR)DSS RDS(on)MAX 25m@4.5V20V 6 A1. GATE 34.5m@2.5V2. SOURCE 3. DRAIN APPLICATION FEA TURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC ConverterMARKING Equivalent Circuit C009TMaximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Dr
si2300.pdf
SI2300LOW VOLTAGE MOSFET (N-CHANNEL)FEATURES Ultra low on-resistance:V =20V,R =40m@V =4.5V,I =5ADS DS(ON) GS D For Low power DC to DC converter application For Load switch application Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: Level 1
si2300.pdf
SI2300SOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Advanced Power MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 319.4m @ 4.5V20V 6.2A21.5m @ 3.3V1. GATE 2. SOURCE 13. DRAIN2FEATURE APPLICATION Low RDS(on) @VGS=4.5V Load Switch DC/DC Converter 3.3V Logic Level Control Switching Circuits Power ManagementMARKING Equivalent circuitD 2300G S
si2300.pdf
SOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETSI2300N-Channel 20-V(D-S) MOSFETSI2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface mount packageC009T wAPPLICATIONLoad Switc
si2300.pdf
SI2300 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 70m RDS(ON), Vgs@ 2.5V, Ids@ 3.1A 80m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions DSOT-23GS MillimeterMillimeterR
si2300.pdf
SI2300N-Channel 20-V(D-S) MOSFET ID SOT-23-3L V(BR)DSS RDS(on)MAX 40m@4.5V20V3A1. GATE 75 m@2.5V2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 2300Maximum ratings (Ta=25 unless otherwise noted) Symbol Value Parameter Unit Drain-Source Volta
si2300.pdf
SI2300 SI2301 FeaturesVDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0AEquivalent CircuitMARKING23003400R34001.GATE2.SOURCE3.DRAINAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source V
si2300ds-t1-ge3.pdf
SI2300DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D
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