SI2301ADS-T1
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2301ADS-T1
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ)
Ohm
Package:
SOT23
SI2301ADS-T1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2301ADS-T1
Datasheet (PDF)
..1. Size:893K cn vbsemi
si2301ads-t1.pdf 
SI2301ADS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION
5.1. Size:46K vishay
si2301ads.pdf
Si2301ADSNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.130 @ VGS = 4.5 V 2.0200.190 @ VGS = 2.5 V 1.6TO-236(SOT-23)G 13 DS 2Top ViewSi2301DS (1A)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V
7.1. Size:333K mcc
si2301a.pdf
M C CRMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street ChatsworthCA 91311SI2301APhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"P-Channel -20V,-2.8A, RDS(ON)=120m@VGS=-4.5VRDS(ON)=150m@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON)
7.2. Size:1114K shenzhen
si2301a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301AP-Channel SI2301AMOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = -4.5 V -2.8-20200.110 @ VGS = -2.5 V -2.0SOT-23/-3LG 13 DS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20VVGate-Source Voltage VGS "8Continuous Drain Curr
7.3. Size:949K umw-ic
si2301a.pdf
RUMW UMW SI2301ASOT23 UMW SI2301AP-Channel 20-V(D-S) MOSFETID V(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.81. GATE 142m@-2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Valu
7.4. Size:303K msksemi
si2301ai-ms.pdf
www.msksemi.comSI2301AI-MSSemiconductor CompianceGeneral Features V = -20V,I = -3ADS DR
7.5. Size:837K cn szxunrui
si2301a.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI2301ASI2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter
7.6. Size:2897K cn puolop
si2301a.pdf
SI2301A20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3.0A 110mRDS(ON), Vgs@-2.5V, Ids@-2.0A 140m FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter Millimeter REF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.3
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