SI2312BDS-T1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2312BDS-T1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028(typ) Ohm
Package: SOT23
SI2312BDS-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2312BDS-T1 Datasheet (PDF)
si2312bds-t1.pdf
SI2312BDS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C
si2312bds.pdf
Si2312BDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.031 at VGS = 4.5 V 5.0 TrenchFET Power MOSFET20 0.037 at VGS = 2.5 V 4.6 7.5 100 % Rg Tested0.047 at VGS = 1.8 V 4.1 Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2
si2312b.pdf
SI2312BFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum RatingsOperating Junction Temperature Range: -55
si2312cds.pdf
New ProductSi2312CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.0318 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.0414 at VGS = 1.8 V 5.6APPLI
si2312ds.pdf
Si2312DSVishay SiliconixN-Channel 20 -V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 1.8-V RatedD RoHS CompliantVDS (V) rDS(on) (W) ID (A) Qg (Typ)Pb-free0.033 @ VGS = 4.5 V 4.9Available0.040 @ VGS = 2.5 V 4.420 11.20.051 @ VGS = 1.8 V 3.9TO-236(SOT-23)G 13 DS 2Top ViewSi2312DS (C2)**Marking CodeOrdering Information: Si2312DS-T1Si2312DS-T1E3 (Lead (Pb)-F
si2312.pdf
SI231220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A
si2312.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.031 @ VGS = 4.5 V 5.00.037 @ VGS = 2.5 V 4.620 7.50.047 @ VGS = 1.8 V 4.1(SOT-23)G 13 DOrdering Information: Si2312S 2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V
si2312ds-3.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain
si2312 ki2312.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2312 (KI2312)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V)1 2 RDS(ON) 40m (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 51m (VGS = 1.8V)G 13 D1. Gate2. SourceS 23. Drain Abs
si2312ds.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET SI2312DS (KI2312DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 20V3 ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V)1 2 RDS(ON) 51m (VGS = 1.8V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Abs
si2312a.pdf
RUMWUMW SI2312AUMW SI2312A FeaturesSOT23 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V)1. GATE MARKING 2. SOURCE 3. DRAIN G 1A12T3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20V Gate
si2312.pdf
SI2312 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A
si2312cds-t1-ge3.pdf
SI2312CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
si2312ds.pdf
SI2312DSwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
