SI2333DDS-T1 PDF and Equivalents Search

 

SI2333DDS-T1 Specs and Replacement

Type Designator: SI2333DDS-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

SI2333DDS-T1 substitution

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SI2333DDS-T1 datasheet

 ..1. Size:1472K  cn vbsemi
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SI2333DDS-T1

SI2333DDS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

 5.1. Size:226K  vishay
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SI2333DDS-T1

Si2333DDS Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.028 at VGS = - 4.5 V - 6e For definitions of compliance please see 0.032 at VGS = - 3.7 V - 6e www.vishay.com/doc?99912 - 12 0.040 at VGS = - 2.5 V - 6e 9 nC 0.063 at... See More ⇒

 7.1. Size:186K  vishay
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SI2333DDS-T1

Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6 APPLICATIONS 0.059 at VGS = - 1.8 V - 3.9 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View S... See More ⇒

 7.2. Size:1223K  kexin
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SI2333DDS-T1

SMD Type MOSFET P-Channel MOSFET SI2333DS (KI2333DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V) 1 2 RDS(ON) 32m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Max... See More ⇒

Detailed specifications: SI2305ADS-T1-GE3, SI2305CDS-T1-GE3, SI2305DS-T1-GE3, SI2309CDS-T1-GE3, SI2312BDS-T1, SI2312CDS-T1-GE3, SI2324DS-T1-GE3, SI2333CDS-T1-GE3, IRF630, SI2333DS-T1-GE3, SI2335DS-T1, SI2342DS-T1, SI2351DS-T1, SI2399DS-T1, SI3911DV-T1, SI4401BDY-T1, SI4401DDY-T1-GE3

Keywords - SI2333DDS-T1 MOSFET specs

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