SI4421DY-T1 Specs and Replacement
Type Designator: SI4421DY-T1
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ -
Output Capacitance: 455 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0112 typ Ohm
Package: SO8
- MOSFET ⓘ Cross-Reference Search
SI4421DY-T1 datasheet
..1. Size:803K cn vbsemi
si4421dy-t1.pdf 
SI4421DY-T1 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 ... See More ⇒
6.1. Size:224K vishay
si4421dy.pdf
Si4421DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.00875 at VGS = - 4.5 V - 14 RoHS COMPLIANT 0.01075 at VGS = - 2.5 V - 20 - 12 APPLICATIONS Game Station 0.0135 at VGS = - 1.8 V - 11 - Load Switch SO-8 S S 1 8 D S D 2 7 S 3 6 D G G ... See More ⇒
9.1. Size:111K international rectifier
si4420dy.pdf
PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate ... See More ⇒
9.2. Size:281K fairchild semi
si4420dy.pdf
January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.013 W @ VGS = 4.5 V that has been especially tailored to minimize on-state resistance and yet maintain superior switc... See More ⇒
9.3. Size:252K vishay
si4425dd.pdf
Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2 ... See More ⇒
9.4. Size:95K vishay
si4425dy.pdf
Si4425DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) FEATURES 0.014 @ VGS = -10 V -11 D TrenchFETr Power MOSFET -30 -30 0.023 @ VGS = -4.5 V -8.5 Pb-free Available SO-8 S SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4425DY Si4425DY-T1 (with Tape and Reel) P-Channel MOSFET Si4425DY E3 (Lead (Pb)-Fr... See More ⇒
9.5. Size:106K vishay
si4420dytr.pdf
PD - 93835 Si4420DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate ... See More ⇒
9.6. Size:227K vishay
si4426dy.pdf
Si4426DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 8.5 TrenchFET Power MOSFETs 20 0.035 at VGS = 2.5 V 7.1 Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View S Ordering Informatio... See More ⇒
9.7. Size:58K vishay
si4420dy.pdf
Si4420DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.009 @ VGS = 10 V 13.5 30 30 0.013 @ VGS = 4.5 V 11 D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4 5 Top View S Ordering Information Si4420DY N-Channel MOSFET Si4420DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL... See More ⇒
9.8. Size:248K vishay
si4420bdy.pdf
Si4420BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET 30 0.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information Si4420BDY-T1-E3 (Lea... See More ⇒
9.9. Size:114K vishay
si4420dypbf si4420dytrpbf.pdf
PD - 95729 Si4420DYPbF HEXFET Power MOSFET l N-Channel MOSFET A A l Low On-Resistance 1 8 S D VDSS = 30V l Low Gate Charge 2 7 S D l Surface Mount 3 6 S D l Logic Level Drive 4 5 l Lead-Free G D RDS(on) = 0.009 Top View Description This N-channel HEXFET power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-res... See More ⇒
9.10. Size:76K vishay
si4427dy.pdf
Si4427DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETs 0.0105 @ VGS = 10 V 13.3 30 0.0125 @ VGS = 4.5 V 12.2 0.0195 @ VGS = 2.5 V 9.8 S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 D Top View Ordering Information Si4427DY-T1 P-Channel MOSFET Si4427DY-T1 E3 (Lead (P... See More ⇒
9.11. Size:224K vishay
si4423dy.pdf
Si4423DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0075 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET 0.009 at VGS = - 2.5 V - 13 - 20 Compliant to RoHS Directive 2002/95/EC 0.0115 at VGS = - 1.8 V - 12 APPLICATIONS Game Station SO-8 - Load Switc... See More ⇒
9.12. Size:227K vishay
si4427bdy.pdf
Si4427BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0105 at VGS = - 10 V - 12.6 TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V - 11.5 - 30 Compliant to RoHS Directive 2002/95/EC 0.0195 at VGS = - 2.5 V - 9.2 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G... See More ⇒
9.13. Size:48K vishay
si4429ed.pdf
Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D VGS Surge Protection to 18 V D ESD Protected 4000 V 0.0105 @ VGS = 10 V 13.0 30 0.0125 @ VGS = 4.5 V 12.0 APPLICATIONS 0.0195 @ VGS = 2.5 V 9.0 D Battery Switch D Load Switch D SO-8 5.5 kW SD 1 8 G S D 2 7 ... See More ⇒
9.14. Size:254K vishay
si4425ddy.pdf
Si4425DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET - 30 27 nC 100 % Rg Tested 0.0165 at VGS = 4.5 V - 15.2 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S SD 1 8 SD 2 ... See More ⇒
9.15. Size:227K vishay
si4425bdy.pdf
Si4425BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.012 at VGS = - 10 V - 11.4 TrenchFET Power MOSFET - 30 0.019 at VGS = - 4.5 V - 9.1 Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches -... See More ⇒
9.16. Size:224K vishay
si4427bd.pdf
Si4427BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0105 at VGS = - 10 V - 12.6 TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V - 11.5 - 30 Compliant to RoHS Directive 2002/95/EC 0.0195 at VGS = - 2.5 V - 9.2 SO-8 S 1 8 D S S D 2 7 S 3 6 D G G... See More ⇒
9.17. Size:943K cn vbsemi
si4420dy.pdf
SI4420DY www.VBsemi.tw N-Channel 650 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 3.8 RoHS Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 6 Compliant to RoHS... See More ⇒
9.18. Size:826K cn vbsemi
si4425dy-t1-e3.pdf
SI4425DY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Deskt... See More ⇒
9.19. Size:855K cn vbsemi
si4425bdy.pdf
SI4425BDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC... See More ⇒
Detailed specifications: SI2351DS-T1, SI2399DS-T1, SI3911DV-T1, SI4401BDY-T1, SI4401DDY-T1-GE3, SI4405DY-T1, SI4410DY-T1, SI4416DY, 4435, SI4431CDY-T1-E3, SI4435BDY, SI4435DY-T1-E3, SI4466DY-T1, SI4532ADY-T1, SI4539DY-T1, SI4840DY-T1-E3, SI4890BDY-T1
Keywords - SI4421DY-T1 MOSFET specs
SI4421DY-T1 cross reference
SI4421DY-T1 equivalent finder
SI4421DY-T1 pdf lookup
SI4421DY-T1 substitution
SI4421DY-T1 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
