SI4431CDY-T1-E3 Datasheet and Replacement
Type Designator: SI4431CDY-T1-E3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
Package: SO8
SI4431CDY-T1-E3 substitution
SI4431CDY-T1-E3 Datasheet (PDF)
si4431cdy-t1-e3.pdf
SI4431CDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S
si4431cdy.pdf
New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS
si4431cd.pdf
New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS
Datasheet: SI2399DS-T1 , SI3911DV-T1 , SI4401BDY-T1 , SI4401DDY-T1-GE3 , SI4405DY-T1 , SI4410DY-T1 , SI4416DY , SI4421DY-T1 , AON7410 , SI4435BDY , SI4435DY-T1-E3 , SI4466DY-T1 , SI4532ADY-T1 , SI4539DY-T1 , SI4840DY-T1-E3 , SI4890BDY-T1 , SI4920DY-T1 .
History: SWD056R68E7T | APT1004R2KN
Keywords - SI4431CDY-T1-E3 MOSFET datasheet
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SI4431CDY-T1-E3 replacement
History: SWD056R68E7T | APT1004R2KN
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