SI4431CDY-T1-E3 Datasheet and Replacement
Type Designator: SI4431CDY-T1-E3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
Package: SO8
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SI4431CDY-T1-E3 Datasheet (PDF)
si4431cdy-t1-e3.pdf
SI4431CDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S
si4431cdy.pdf
New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS
si4431cd.pdf
New ProductSi4431CDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.032 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.049 at VGS = - 4.5 V - 5.8APPLICATIONS Load Switch Battery SwitchSO-8S S1 8 DS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SPI07N65C3 | HLML6401 | PHD101NQ03LT | NCE65TF130T | SFF23N60Z | SWN6N65K | AP85T03GH-HF
Keywords - SI4431CDY-T1-E3 MOSFET datasheet
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SI4431CDY-T1-E3 replacement
History: SPI07N65C3 | HLML6401 | PHD101NQ03LT | NCE65TF130T | SFF23N60Z | SWN6N65K | AP85T03GH-HF
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