All MOSFET. SI6435ADQ-T1 Datasheet

 

SI6435ADQ-T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI6435ADQ-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.05 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 85 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
   Package: TSSOP8

 SI6435ADQ-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI6435ADQ-T1 Datasheet (PDF)

 ..1. Size:864K  cn vbsemi
 si6435adq-t1.pdf

SI6435ADQ-T1 SI6435ADQ-T1

SI6435ADQ-T1www.VBsemi.twP-Channel 20-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = - 4.5 V Available- 9.0RoHS*0.015 at VGS = - 2.5 V -20 - 7.8COMPLIANT0.020 at VGS = - 1.8 V - 6.0S*TSSOP-8 GD D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7 S S 3

 5.1. Size:198K  vishay
 si6435adq.pdf

SI6435ADQ-T1 SI6435ADQ-T1

Si6435ADQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.030 at VGS = - 10 V 5.5- 30RoHS0.055 at VGS = - 4.5 V 4.1COMPLIANTS*GTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6435ADQS S3 6G D4 5DTop ViewP-Channel MO

 9.1. Size:65K  vishay
 si6433dq.pdf

SI6435ADQ-T1 SI6435ADQ-T1

Si6433DQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.06 @ VGS = 4.5 V "4.012120.09 @ VGS = 2.5 V "3.0S*TSSOP-8GD D1 8D* Source Pins 2, 3, 6 and 7 S S must be tied common.2 7Si6433DQS S3 6G D4 5Top ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

 9.2. Size:53K  vishay
 si6436dq.pdf

SI6435ADQ-T1 SI6435ADQ-T1

Si6436DQN-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.045 @ VGS = 10 V "4.430300.070 @ VGS = 4.5 V "3.5DTSSOP-81 8D DD*Source Pins 2, 3, 6 and 7 S 2 7 Smust be tied common.Si6436DQ GS 3 6 SG 4 5 DTop ViewS*N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Sourc

 9.3. Size:204K  vishay
 si6433bdq.pdf

SI6435ADQ-T1 SI6435ADQ-T1

Si6433BDQVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.040 at VGS = - 4.5 V - 4.8- 12RoHS0.070 at VGS = - 2.5 V - 3.6COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7S S3 6G D4 5Top View DOrdering Information: Si6433BDQ-T1-GE3 (Lead (Pb)-free a

 9.4. Size:59K  vishay
 si6434dq.pdf

SI6435ADQ-T1 SI6435ADQ-T1

Si6434DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.028 @ VGS = 10 V 5.630300.042 @ VGS = 4.5 V 4.5DTSSOP-8D D1 8D * Source Pins 2, 3, 6 and 7 S S must be tied common.2 7GS S3 6G D4 5Top ViewS*Ordering Information: Si6434DQ-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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