All MOSFET. SI9955DY Datasheet

 

SI9955DY Datasheet and Replacement


   Type Designator: SI9955DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.040(typ) Ohm
   Package: SO8
 

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SI9955DY Datasheet (PDF)

 ..1. Size:947K  cn vbsemi
 si9955dy.pdf pdf_icon

SI9955DY

SI9955DYwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

 9.1. Size:68K  1
 si9953dy.pdf pdf_icon

SI9955DY

Si9953DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.25 @ VGS = 10 V "2.320200.40 @ VGS = 4.5 V "1.5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D1 D2 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain

 9.2. Size:135K  vishay
 si9958dy.pdf pdf_icon

SI9955DY

 9.3. Size:66K  vishay
 si9956dy.pdf pdf_icon

SI9955DY

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Datasheet: SI4953DY-T1-E3 , SI6423DQ-T1 , SI6435ADQ-T1 , SI6913DQ-T1 , SI7478DP-T1 , SI9410BDY-T1 , SI9933ADY , SI9948AEY-T1-E3 , P0903BDG , SIR422DP-T1-GE3 , SIR462DP-T1 , SIR802DP-T1-GE3 , SM2300NSAC , SM3113NSUC , SM4028NSUC-TRG , SM4307PSKPC , SM4927BSKC .

History: KO3414 | IRFU4510 | IRL640PBF | IXTP230N04T4M | WMK80R350S | R6035KNZ | FHP12N60

Keywords - SI9955DY MOSFET datasheet

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