SPN2054T252RG MOSFET. Datasheet pdf. Equivalent
Type Designator: SPN2054T252RG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 525 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007(typ) Ohm
Package: TO252
SPN2054T252RG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPN2054T252RG Datasheet (PDF)
spn2054t252rg.pdf
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SPN2054T252RGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFET
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