ST2300S23RG PDF and Equivalents Search

 

ST2300S23RG Specs and Replacement

Type Designator: ST2300S23RG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 typ Ohm

Package: SOT23

ST2300S23RG substitution

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ST2300S23RG datasheet

 ..1. Size:878K  cn vbsemi
st2300s23rg.pdf pdf_icon

ST2300S23RG

ST2300S23RG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/... See More ⇒

 7.1. Size:479K  stansontech
st2300srg.pdf pdf_icon

ST2300S23RG

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

 8.1. Size:383K  stansontech
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ST2300S23RG

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo... See More ⇒

 8.2. Size:1440K  jestek
jst2300.pdf pdf_icon

ST2300S23RG

JST2300 20V,5A N-Channel Mosfet PACKAGE FEATURES RDS(ON) 25m @VGS=4.5V RDS(ON) 38m @VGS=2.5V APPLICATIONS PWM Applications Load Switch Power Management MARKING N-CHANNEL MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5 A D Pl... See More ⇒

Detailed specifications: SPN6561S26RGB, SPP3414S23RG, SPP6506S26R, SPP6507S26RGB, SPP80N03S2L, SQ9407EY-T1, SSC8022GS6, SSM2307G, IRF9640, ST2302MSRG, STD10NF06, STD30PF03, STD60NF3L, STD95NH02L, STT8205S, SUD08P06-155, SUD08P06-155L-E3

Keywords - ST2300S23RG MOSFET specs

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