All MOSFET. SUD40N08 Datasheet

 

SUD40N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD40N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0050(typ) Ohm
   Package: TO252

 SUD40N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD40N08 Datasheet (PDF)

 ..1. Size:1358K  cn vbsemi
 sud40n08.pdf

SUD40N08 SUD40N08

SUD40N08www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlighti

 0.1. Size:66K  vishay
 sud40n08-16.pdf

SUD40N08 SUD40N08

SUD40N08-16Vishay SiliconixN-Channel 80-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested80 0.016 @ VGS = 10 V 40DTO-252GDrain Connected to TabG D STop ViewOrdering Information:SSUD40N08-16SUD40N08-16E3 (Lead Free) N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 7.1. Size:67K  vishay
 sud40n02-08.pdf

SUD40N08 SUD40N08

SUD40N02-08Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested0.0085 @ VGS = 4.5 V 4020200.014 @ VGS = 2.5 V 40DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD40N02-08N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA

 7.2. Size:84K  vishay
 sud40n03-18p.pdf

SUD40N08 SUD40N08

SUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)a0.018 @ VGS = 10 V "4030300.027 @ VGS = 4.5 V "34DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD40N03-18PN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltag

 7.3. Size:173K  vishay
 sud40n02.pdf

SUD40N08 SUD40N08

New ProductSUD40N02-3m3PVishay SiliconixN-Channel 20-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg TestedRoHS 0.0033 at VGS = 10 V 40COMPLIANT 20 30 nC0.0044 at VGS = 4.5 V 40APPLICATIONS ServerTO-252DGDrain Connected to TabG D STop ViewSOrder Number:SUD40N02

 7.4. Size:49K  vishay
 sud40n04-10a.pdf

SUD40N08 SUD40N08

SUD40N04-10ANew ProductVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.010 @ VGS = 10 V 40400.014 @ VGS = 4.5 V 40DTO-252GDrain Connected to TabG D STop ViewSOrder Number: N-Channel MOSFETSUD40N04-10AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volta

 7.5. Size:174K  vishay
 sud40n02-3m3p.pdf

SUD40N08 SUD40N08

New ProductSUD40N02-3m3PVishay SiliconixN-Channel 20-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg TestedRoHS 0.0033 at VGS = 10 V 40COMPLIANT 20 30 nC0.0044 at VGS = 4.5 V 40APPLICATIONS ServerTO-252DGDrain Connected to TabG D STop ViewSOrder Number:SUD40N02

 7.6. Size:68K  vishay
 sud40n06-25l.pdf

SUD40N08 SUD40N08

SUD40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aAvailableD 175_C Maximum Junction0.022 @ VGS = 10 V 30Temperature60600.025 @ VGS = 4.5 V 30D 100% Rg TestedDTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD4

 7.7. Size:770K  cn vbsemi
 sud40n06-25l.pdf

SUD40N08 SUD40N08

SUD40N06-25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

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