FDB075N15A Datasheet. Specs and Replacement

Type Designator: FDB075N15A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 92 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263 D2PAK

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FDB075N15A substitution

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FDB075N15A datasheet

 ..1. Size:362K  fairchild semi
fdb075n15a f085.pdf pdf_icon

FDB075N15A

October 2013 FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5m D D Features Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta... See More ⇒

 ..2. Size:312K  fairchild semi
fdp075n15a f102 fdb075n15a.pdf pdf_icon

FDB075N15A

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc... See More ⇒

 ..3. Size:698K  fairchild semi
fdp075n15a fdb075n15a.pdf pdf_icon

FDB075N15A

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s... See More ⇒

 ..4. Size:821K  onsemi
fdp075n15a fdb075n15a.pdf pdf_icon

FDB075N15A

March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge... See More ⇒

Detailed specifications: FDB039N06, FDB045AN08A0, FDB045AN08A0F085, FDB047N10, STU405DH, FDB050AN06A0, FDB060AN08A0, FDB070AN06A0, 10N60, FDB082N15A, FDB088N08, FDB110N15A, FDB120N10, STU407DH, FDB12N50F, FDB12N50TM, FDB12N50U

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