FDB075N15A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB075N15A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 92
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 77
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO263
D2PAK
FDB075N15A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB075N15A
Datasheet (PDF)
..1. Size:362K fairchild semi
fdb075n15a f085.pdf 
October 2013FDB075N15A_F085N-Channel Power Trench MOSFET150V, 110A, 7.5m DDFeatures Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta
..2. Size:312K fairchild semi
fdp075n15a f102 fdb075n15a.pdf
October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
..3. Size:698K fairchild semi
fdp075n15a fdb075n15a.pdf
December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges
..4. Size:821K onsemi
fdp075n15a fdb075n15a.pdf
March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge
..5. Size:279K inchange semiconductor
fdb075n15a.pdf
Isc N-Channel MOSFET Transistor FDB075N15AFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
0.1. Size:449K onsemi
fdb075n15a-f085.pdf
FDB075N15A-F085N-Channel Power Trench MOSFET DD150V, 110A, 7.5mFeaturesG Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A GS UIS CapabilityTO-263S RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator
9.1. Size:599K fairchild semi
fdb070an06a0 fdp070an06a0.pdf
March 2003FDB070AN06A0 / FDP070AN06A0N-Channel PowerTrench MOSFET60V, 80A, 7mFeatures Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)
9.2. Size:726K fairchild semi
fdb070an06 f085.pdf
May 2012FDB070AN06A0_F085N-Channel PowerTrench MOSFET60V, 80A, 7mFeatures Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c
9.3. Size:1528K onsemi
fdb070an06a0-f085.pdf
FDB070AN06A0-F085 N-Channel PowerTrench MOSFET 60V, 80A, 7m Features Applications r = 6.1m (Typ.), V = 10V, I = 80A DS(ON) GS D Motor / Body Load Control Q = 51nC (Typ.), V = 10V g(tot) GS ABS Systems Low Miller Charge Pow ertrain Management Low Q Body Diode RR Injection Systems UIS Capability (Single Pulse and Repetitive
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
