UT100N03L PDF and Equivalents Search

 ..1. Size:815K  cn vbsemi
 ut100n03l.pdf

UT100N03L www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View AB... See More ⇒

 0.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON) ... See More ⇒

 0.2. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 1 1 switch or in PWM applications. TO-252 TO-251 FEATURES 1 * RDS(ON) ... See More ⇒

 6.1. Size:261K  utc
 ut100n03-q.pdf

UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3m @VGS=10 V * RDS(ON) = 8.0m @VGS=4.... See More ⇒

 6.2. Size:268K  utc
 ut100n03.pdf

... See More ⇒