FDB082N15A Datasheet. Specs and Replacement

Type Designator: FDB082N15A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 294 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO263 D2PAK

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FDB082N15A datasheet

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FDB082N15A

November 2013 FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 m Features Description RDS(on) = 6.7 m (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching performance. ... See More ⇒

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FDB082N15A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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FDB082N15A

February 2010 FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8m Features Description RDS(on) = 7.3 m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet Low Gate Charge maintain superior... See More ⇒

Detailed specifications: FDB045AN08A0, FDB045AN08A0F085, FDB047N10, STU405DH, FDB050AN06A0, FDB060AN08A0, FDB070AN06A0, FDB075N15A, IRFB4115, FDB088N08, FDB110N15A, FDB120N10, STU407DH, FDB12N50F, FDB12N50TM, FDB12N50U, FDB13AN06A0

Keywords - FDB082N15A MOSFET specs

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