All MOSFET. UTT80N10 Datasheet

 

UTT80N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UTT80N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 250 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 105 nC
   Rise Time (tr): 90 nS
   Drain-Source Capacitance (Cd): 665 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0085(typ) Ohm
   Package: TO220AB

 UTT80N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTT80N10 Datasheet (PDF)

 ..1. Size:801K  cn vbsemi
utt80n10.pdf

UTT80N10
UTT80N10

UTT80N10www.VBsemi.twN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.010 at VGS = 6 V85TO-220ABDGSN-Channel MOSFETG D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not

 8.1. Size:127K  utc
utt80n75.pdf

UTT80N10
UTT80N10

UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTCs advanced technology to provide customers with a minimum 1on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge

 8.2. Size:201K  utc
utt80n06.pdf

UTT80N10
UTT80N10

UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U

 8.3. Size:127K  utc
utt80n08.pdf

UTT80N10
UTT80N10

UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai

 8.4. Size:129K  utc
utt80n05.pdf

UTT80N10
UTT80N10

UNISONIC TECHNOLOGIES CO., LTD UTT80N05 Preliminary Power MOSFET 80A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N05 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith a minimum on-state resistance, superior switching performanceand low gate charge. The UTC UTT80N05 is suitable for switching regulators, DC line

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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