UTT80N10 Spec and Replacement
Type Designator: UTT80N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 665 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085(typ) Ohm
Package: TO220AB
UTT80N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTT80N10 Specs
utt80n10.pdf
UTT80N10 www.VBsemi.tw N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.010 at VGS = 6 V 85 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise not... See More ⇒
utt80n75.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC s advanced technology to provide customers with a minimum 1 on-state resistance, low gate charge and high switching speed. TO-220 FEATURES * 80A, 75V, RDS(ON)=10m @VGS=10V, ID=20A * Low gate charge ... See More ⇒
utt80n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary Power MOSFET 60V, 80A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC U... See More ⇒
utt80n08.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL 2.Drai... See More ⇒
Detailed specifications: UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , IRLZ44N , VB1102M , VB1106K , VB1218X , VB1240B , VB1240X , VB1330X , VB162KX , VB2140 .
History: MG120R080 | F4N60 | JCS8N60C | RJK0390DPA
Keywords - UTT80N10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MG120R080 | F4N60 | JCS8N60C | RJK0390DPA
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