VBA2412 Datasheet and Replacement
Type Designator: VBA2412
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 335 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.010(typ) Ohm
Package: SO8
VBA2412 substitution
VBA2412 Datasheet (PDF)
vba2412.pdf

VBA2412www.VBsemi.comP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1
Datasheet: VBA1310S , VBA1311 , VBA1405 , VBA1410 , VBA2107 , VBA2305 , VBA2309 , VBA2317 , IRFB3607 , VBA2625 , VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 .
History: CM3N50C | STFV4N150 | IRF7700G | AO6601 | JMSL0302AU | INK0102AC1 | MI4800
Keywords - VBA2412 MOSFET datasheet
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History: CM3N50C | STFV4N150 | IRF7700G | AO6601 | JMSL0302AU | INK0102AC1 | MI4800



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