All MOSFET. VBA4311 Datasheet

 

VBA4311 Datasheet and Replacement


   Type Designator: VBA4311
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: SO8
 

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VBA4311 Datasheet (PDF)

 ..1. Size:515K  cn vbsemi
vba4311.pdf pdf_icon

VBA4311

VBA4311www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) (), ID (A)d, e Qg (Typ.)Typ. TrenchFET Power MOSFET0.011 at VGS = - 10 V - 12 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.013 at VGS = - 4.5 V - 10APPLICATIONS Load Switches- Notebook PCs- Desktop PCs- Game StationsS1 S2SO-8S1 1 D1

 8.1. Size:503K  cn vbsemi
vba4317.pdf pdf_icon

VBA4311

VBA4317www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1

 9.1. Size:490K  cn vbsemi
vba4338.pdf pdf_icon

VBA4311

VBA4338www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

Datasheet: VBA3102M , VBA3211 , VBA3310 , VBA3316G , VBA3328 , VBA3410 , VBA3695 , VBA4216 , IRFP450 , VBA4317 , VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M .

History: SSM3K15FV | UPA1764G | YJL2301F | STD5NK50ZT4 | 2P829G | C3M0065090D | 6N60KG-TA3-T

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