VBA4338 Specs and Replacement
Type Designator: VBA4338
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm
Package: SO8
VBA4338 substitution
- MOSFET ⓘ Cross-Reference Search
VBA4338 datasheet
vba4338.pdf
VBA4338 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie... See More ⇒
vba4317.pdf
VBA4317 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1... See More ⇒
vba4311.pdf
VBA4311 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) , ID (A)d, e Qg (Typ.) Typ. TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 12 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.013 at VGS = - 4.5 V - 10 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs - Game Stations S1 S2 SO-8 S1 1 D1 ... See More ⇒
Detailed specifications: VBA3310, VBA3316G, VBA3328, VBA3410, VBA3695, VBA4216, VBA4311, VBA4317, STP80NF70, VBA4658, VBA4670, VBA5102M, VBA5325, VBA5415, TSA100N20M, TSA18N50MR, TSA20N60MR
Keywords - VBA4338 MOSFET specs
VBA4338 cross reference
VBA4338 equivalent finder
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