All MOSFET. VBA4670 Datasheet

 

VBA4670 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA4670
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066(typ) Ohm
   Package: SO8

 VBA4670 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA4670 Datasheet (PDF)

 ..1. Size:768K  cn vbsemi
 vba4670.pdf

VBA4670 VBA4670

VBA4670www.VBsemi.comDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ( ) Typ. ID (A) d Qg (TYP.) Halogen-free According to IEC 61249-2-21 Definition0.066 at VGS = -10 V -5.0-60 10.1 nC TrenchFET Power MOSFET 0.070 at VGS = -4.5 V -4.0 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D

 9.1. Size:490K  cn vbsemi
 vba4658.pdf

VBA4670 VBA4670

VBA4658www.VBsemi.comDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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