TSF18N60MR Datasheet and Replacement. Cross Reference Search

TSF18N60MR Datasheet (PDF)

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TSF18N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,600V,Max.RDS(on)=0.45 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

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TSF18N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 18.0A,500V,Max.RDS(on)=0.32 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

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TSF18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC) minimize on-state resistance, provide superior switching High ruggedness performance,

Datasheet: TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR , TSF16N60MR , TSF16N65MR , TSF18N20M , TSF18N50MR , IRF1405 , TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 .