TSF18N60MR Datasheet and Replacement
Type Designator: TSF18N60MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220F
TSF18N60MR substitution
TSF18N60MR Datasheet (PDF)
tsf18n60mr.pdf

TSF18N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,600V,Max.RDS(on)=0.45 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsf18n50mr.pdf

TSF18N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 18.0A,500V,Max.RDS(on)=0.32 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with
tsf18n20m.pdf

TSF18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 18A,200V,Max.RDS(on)=0.17 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 22nC) minimize on-state resistance, provide superior switching High ruggedness performance,
Datasheet: TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR , TSF16N60MR , TSF16N65MR , TSF18N20M , TSF18N50MR , IRF1405 , TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 .
History: PMZB200UNE
Keywords - TSF18N60MR MOSFET datasheet
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History: PMZB200UNE



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