TSF20N50M Datasheet and Replacement
Type Designator: TSF20N50M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
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TSF20N50M Datasheet (PDF)
tsf20n50m.pdf

TSF20N50M500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withstan
tsf20n65mr.pdf

TSF20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with
tsf20n60mr.pdf

TSF20N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT31M100B2 | HLML6401 | SST80R850S | SM2201NSQG | PMN27UN | HFS10N65JS | AP85T03GH-HF
Keywords - TSF20N50M MOSFET datasheet
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History: APT31M100B2 | HLML6401 | SST80R850S | SM2201NSQG | PMN27UN | HFS10N65JS | AP85T03GH-HF



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