TSF65R360S2 Specs and Replacement
Type Designator: TSF65R360S2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220F
TSF65R360S2 substitution
- MOSFET ⓘ Cross-Reference Search
TSF65R360S2 datasheet
tsf65r360s2.pdf
TSF65R360S2 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult... See More ⇒
tsf65r300s1.pdf
TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr... See More ⇒
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 T... See More ⇒
tsf65r190s2 tsp65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 This advanced technology... See More ⇒
Detailed specifications: TSF20N65MR, TSF4N90M, TSF60R190S2, TSP60R190S2, TSF65R190S2, TSP65R190S2, TSA65R190S2, TSK65R190S2, 60N06, TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M
Keywords - TSF65R360S2 MOSFET specs
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