TSF840MR Datasheet and Replacement. Cross Reference Search

TSF840MR Datasheet (PDF)

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TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,500V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

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TSP840MR/TSF840MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 9.0A,500V,Max.RDS(on)=0.80 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperfor

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TSF840MD500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 8.0A,500V,Max.RDS(on)=0.95 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 30nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: TSF60R190S2 , TSP60R190S2 , TSF65R190S2 , TSP65R190S2 , TSA65R190S2 , TSK65R190S2 , TSF65R360S2 , TSF840MD , IRFP064N , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , TSF10N65M , TSP12N60M .