TSF5N65M Datasheet and Replacement
Type Designator: TSF5N65M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
TSF5N65M substitution
TSF5N65M Datasheet (PDF)
tsp5n65m tsf5n65m.pdf

TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperform
tsp5n60m tsf5n60m.pdf

TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2@VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemis advanced planar stripe, DMOS technology.This latest technology has been especially designed t
tsp5n60m tsf5n60m.pdf

TSP5N60M/TSF5N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an
Datasheet: TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M , TSP5N65M , 10N60 , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M , TSP7N80M , TSF7N80M .
History: AP18P10AGH-HF | TPD60R1K5MFD
Keywords - TSF5N65M MOSFET datasheet
TSF5N65M cross reference
TSF5N65M equivalent finder
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TSF5N65M replacement
History: AP18P10AGH-HF | TPD60R1K5MFD



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