FDB150N10 MOSFET Datasheet: N-Ch, 100V, 57A. Full specification with pinout and replacement list

FDB150N10 Specs and Replacement

Type Designator: FDB150N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO263 D2PAK

FDB150N10 substitution

- MOSFET ⓘ Cross-Reference Search

FDB150N10 datasheet

..1. Size:530K fairchild semi
fdb150n10.pdf pdf_icon

July 2008 FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15m Features General Description RDS(on) = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching per... See More ⇒

..2. Size:665K onsemi
fdb150n10.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

9.1. Size:194K fairchild semi
fdh15n50 fdp15n50 fdb15n50.pdf pdf_icon

August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) ... See More ⇒

9.2. Size:623K onsemi
fdb15n50.pdf pdf_icon