TSP7N80M Specs and Replacement
Type Designator: TSP7N80M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220
TSP7N80M substitution
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TSP7N80M datasheet
tsp7n80m tsf7n80m.pdf
TSP7N80M/TSF7N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 40nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
tsp7n60m tsf7n60m.pdf
TSP7N60M/TSF7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, and ... See More ⇒
tsp7n65m tsf7n65m.pdf
TSP7N65M/TSF7N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7A,650V,Max.RDS(on)=1.6 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, and wi... See More ⇒
Detailed specifications: TSP5N65M, TSF5N65M, TSP740MR, TSF740MR, TSP7N60M, TSF7N60M, TSP7N65M, TSF7N65M, 2N7000, TSF7N80M, TSP840MR, TSP8N65M, TSF8N65M, YJB150G06AK, YJB150N06BQ, YJB200G06B, YJD15N10A
Keywords - TSP7N80M MOSFET specs
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