All MOSFET. TSP7N80M Datasheet

 

TSP7N80M Datasheet and Replacement


   Type Designator: TSP7N80M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220
 

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TSP7N80M Datasheet (PDF)

 ..1. Size:1260K  truesemi
tsp7n80m tsf7n80m.pdf pdf_icon

TSP7N80M

TSP7N80M/TSF7N80M800V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 40nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 9.1. Size:1240K  truesemi
tsp7n60m tsf7n60m.pdf pdf_icon

TSP7N80M

TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

 9.2. Size:1213K  truesemi
tsp7n65m tsf7n65m.pdf pdf_icon

TSP7N80M

TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi

Datasheet: TSP5N65M , TSF5N65M , TSP740MR , TSF740MR , TSP7N60M , TSF7N60M , TSP7N65M , TSF7N65M , IRF9540 , TSF7N80M , TSP840MR , TSP8N65M , TSF8N65M , YJB150G06AK , YJB150N06BQ , YJB200G06B , YJD15N10A .

History: FTK2N65P

Keywords - TSP7N80M MOSFET datasheet

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