TSF7N80M MOSFET. Datasheet pdf. Equivalent
Type Designator: TSF7N80M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220F
TSF7N80M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSF7N80M Datasheet (PDF)
tsp7n80m tsf7n80m.pdf
TSP7N80M/TSF7N80M800V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,800V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 40nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsp7n60m tsf7n60m.pdf
TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
tsp7n65m tsf7n65m.pdf
TSP7N65M/TSF7N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7A,650V,Max.RDS(on)=1.6 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and wi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
